Powdec is able to perform face-down crystal growth by our unique MOCVD technology. For this reason, high quality thin films with low defect density are realized. We can grow on sapphire substrate, GaN substrate, and SiC substrate. We can prepare single-layer to multi-layer, or electronic device and optical device structure according to customer's request. We support your R & D or small production.
Substrate size is available from 2 inches to 6 inches Powdec’s unique MOCVD technology
Powdec has succeeded in developing a high-voltage, high-current, high-speed power transistor called a polarization super junction. We will support customers who want to use this power transistor or think about commercialization. We can also manufacture and supply your original design devices. For example, we can manufacture LED wafers for micro displays, so please feel free to contact us.
Polarization super junction μLED display

more News

2021 Jun 24
Development status and issues of GaN-PSJ power devices on sapphire was announced at the 7th Study Group on Silicon for Power Devices and Related Semiconductor Materials.
2020 Mar 13
6.6 kV class normally-off GaN-PSJ FET was presented at the 67th JSAP Spring Meeting.
2019 Mar 14
GaN PSJ (Polarization Superjunction) Element was announced in Future of GaN Materials that Contribute to Energy Conservation Society and Its Key Process Technology.
2018 Sep 18
1.2 kV class normally-off GaN-PSJ FET was presented at 79th JSAP Autumn Meeting.
2018 Mar 17
We announced GaN-PSJ FET with withstand voltage of over 10 kV and GaN-PSJ Schottky Barrier Diode at over 8 kV at the 65 th JSAP Spring Meeting.
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