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2015 Aug
[Newsrelease]POWDEC has developed very low-cost 1,200V rating-voltage GaN power transistors.
2015 Apr 17
The JSAP Spring Meeting,2015 annoced the 「Normally-Off GaN-PSJ FETs」
2014 Sep 19
The JSAP Autumn Meeting,2014 annoced the 「600 V Switching Characteristics of GaN Polarization Super-Junction (PSJ) Transistors on Sapphire substrate」
2013 Oct 03
POWDEC today announced its breakthrough Polarization Super-junction GaN power transistors on silicon substrates for realization.
2012 Oct 15
President, Dr. Kawai, will present a lecture entitled "Current status and possibility of GaN power devices" at a workshop "The progress in wide-bandgap semiconductor power devices" sponsored by Japan Society of Applied Physics on November 2, 2012.
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